Memory Design Engineer (contractor) Resume
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Santa Clara, CA
OBJECTIVE:
- A Challenging Circuit Design Engineer Position in VLSI CMOS Area.
PROFESSIONAL EXPERIENCE
Memory Design Engineer (Contractor)
Confidential, Santa Clara, CA
Responsibilities:
- Design low - power DMEM (2kx72) and IMEM (2kx54) Single-Port Cache-Memory with Redundancy using High-speed Dynamic Circuit technique for high-speed Bandwidth Engine chip.)
- Design/implement custom high performance, low power and area efficient memory macros; SRAMs, Dual-Ports and Multi-Ports Register Files according to logic/architecture teams specs using custom flow with SRAM bit-cell from TSMC45nm. (Circuit design, schematic entry, layout extraction, margin analysis, timing/power char, timing model generation.). Perform back-end noise, EM/IR analysis and macro functional verification.
Staff Memory Design Engineer
Confidential, San Jose, CA
Responsibilities:
- Design of Low-Power 28nm & FINFET for Samsung 14nm Single-Port SRAM Compiler (margin analysis, characterization timing and power, functional verification with ESPCV, leakage, EM/IR analysis, and back-end-flow, etc.)
- Write and Read Assist scheme to improve margin at 14nm CP technology
- Design of Single and Dual-port SRAM for memory compiler up to 1Mbit for cache application with multi banks architecture with redundancy for test & repair. Support optional features such as BIST, PIPELINE, and Power-Gating for leakage reduction.
- EM/IR/SIGEM analysis and layout improvement with FINFET Technology.
- Memory development flow, starting at design spec.
- Optimize the timing path of L1 and L2 Cache level blocks for internal ARM processors.
- Develop new circuitry and perform speed, margin analysis & characterization for all the compilers. Build up the physical instance of RAM through tiling and run formal FE and back-end verification for the whole compiler, QA and release the products.
Sr. Member of Technical Staff
Confidential, Santa Clara, CA
Responsibilities:
- Design Multi-Ports Floating Point Architecture Register File for FGU unit using 3-D RF cell with two levels of sensing scheme and Transfer port.
- Create the common library for Single and Multi-Ports Register File and involve in general methodology for designing both high-speed and low-power RF with the team.
- Design and develop different types of CAM configurations, Dynamic circuits Methodology for ALU dynamic circuit design.
- Participate in large designs taped out and silicon debug including running full-chip max and min timing, block regression with static timing tools.
- Supervise IC Mask Designers to maximize the performance of the circuits from leaf-cell level to the production top-level layout.
- Design Single/Dual port SRAM for memory compiler on 0.35um and 0.25um with IBM and TSMC process.
- Perform timing simulation, schematic entry, debugging and characterization of SRAM sub-blocks (Sense-Amp, Control Logic, Decoders, Write Circuitry)
TECHNICAL SKILLS
SOFTWARE: Verilog,,C++, Perl, Sed and Awk, c-shell Programming.
CAD TOOLS: HSPICE, Finesim, Cadence Tools, Calibre, Simplex, Pathmill, Perl, RTL, verification with HSIM and ESPCV.
EQUIPMENTS: Oscilloscope, Spectrum Analyzer, Synopsys dc shell/Logic Analyzer.
TRANING: 16bits Computer Architecture Design (DSP processor design) with RTL coding, simulation, debug, and verification, Low Power SRAM.